Let us assume a 2D layered material that is set at the onset of the phase change, which puts it at a resistivity \(\rho_0\) and a bias \(V_0\). Now, assuming that we set the initial temperature to be at the negative differential resistance interval, say, 50K for the case of NbSe\(_3\), and make our sample as small as possible. As a result, any radiation that is incident on the sample will cause a significant change in temparature. As a result, the resistivity will sharply drop; resulting in increased current. However, either from the small size of the device, or by actively using a portion of the resulting current spike to cool down the device using thermoelectric cooling, it will be possible to recover the initial bias. In the case that the current spike is very sharp, so will be the voltage drop. In principle, such a device should operate efficiently due to its small size, but it may prove challenging to find a CDW transition that is sharp with temparature; since CDW phase transitions are generally type 2 [1].